| abstract |
PURPOSE: To form a lead structure whose lead part is sufficiently thin, where an interval is fine and which is comparatively strong by a method wherein, after a lead pattern for external connection use of a semiconductor device electrode has been formed on a substrate, a bare chip of a semiconductor device has been bonded onto the lead pattern in a facedown manner, this semiconductor device is sealed by using a sealing material such as a resin or the like and only the substrate is removed. n CONSTITUTION: A resist 11 for conductor lead pattern formation use is formed on one face of a substrate 10 of aluminum, stainless steel or the like; after that, openings are made in this resist 11; conductor lead patterns 12 composed of copper, aluminum, an alloy of these or the like are formed in the openings by an electrolytic plating method or the like. Then, the resist 11 is removed; after that, the semiconductor device 14 is bonded onto the conductor lead patterns 12 in a facedown manner by using a conductive bonding material 13 such as a solder, a conductive paste or the like. After that, the semiconductor device 14 is covered wholly with a sealing material 15 such as a resin-based material or the like; a gap between the semiconductor device 14 and the base substrate 10 is filled. Then, the base substrate 10 is removed; a package of the semiconductor device is completed. n COPYRIGHT: (C)1989,JPO&Japio |