http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01156437-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B58-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G15-00
filingDate 1987-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7f8c1f499c0076649aa7554b77ff9be
publicationDate 1989-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01156437-A
titleOfInvention Method for refining indium
abstract PURPOSE: To manufacture a high-purity In of semiconductor grade by allowing metallic In to react with Cl gas, carrying out distillation refining, immersing the obtained refined InCl in pure water to carry out disproportioning, separating the resulting metallic In, and subjecting this metallic In to melting in a hydrogen air flow and then to solidification by cooling. n CONSTITUTION: A Cl gas is blown into metallic In of about 99.99% purity at a temp. in the vicinity of the melting point (220°C) of InCl to form InCl, and blowing is discontinued at the stage where metallic In remains. At this time, the initial distillate (about 5W30% of the whole distillate) is separated. Subsequently, the refined InCl is immersed in pure water and formed into metallic In and InCl 3 by means of disproportionation at ≤about 60°C, and the metallic In is separated from the aqueous solution of InCl 3 . The separated spongy metallic In is sufficiently washed with pure water, melted in a hydrogen air flow or in vacuum, and solidified by cooling so as to be formed into an ingot. By this method, the high-purity metallic In of ≥about 99.99999% purity can be obtained. n COPYRIGHT: (C)1989,JPO&Japio
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priorityDate 1987-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.