http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01152649-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1987-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_454c1a286ca121675896ed46ff19e9c8 |
| publicationDate | 1989-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01152649-A |
| titleOfInvention | Semiconductor device |
| abstract | PURPOSE: To improve the yield rate of a multilayer wiring integrated circuit without forming aluminum at a wiring connection part between multilayer wiring systems, by possessing a wiring connection part which is composed of: a laminated film consisting of the first and second metallic films as well as an oxide film of the second metallic film, and insulating film formed on the above laminated film, an aperture formed at the insulating film, and the third metallic film formed at the above aperture. n CONSTITUTION: A semiconductor device possesses a wiring connection part which is composed of: a lower wiring layer consisting of the first aluminum film 3 of about 1μm thickness and a tin film 4 of about 0.2μm thickness as well as a tin dioxide (SnO 2 ) film 5 of about 0.2μm thickness which are formed on a silicon substrate 1 by laminating one after another through an interlayer film 2 consisting of a silicon oxide film and phosphorous silicate glass(PSG); an insulating layer 6 having the thickness of about 8μm which is comprised of the silicon oxide film and a silicon nitride film that are formed with a plasma excitation CVD process; a contact hole 8 which is made at the insulating film 6; and a contact hole 7 as well as the second aluminum film 7 which acts as an upper wiring layer formed on the insulating film 6. n COPYRIGHT: (C)1989,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008147671-A |
| priorityDate | 1987-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.