http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01144043-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72 |
| filingDate | 1987-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddf196bc2228090e5efef17587c8b393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_227d183b69cb29c5ad13faa74334b194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48f58c288c2e9d934166248227e6fd43 |
| publicationDate | 1989-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01144043-A |
| titleOfInvention | Positive type photoresist material |
| abstract | PURPOSE:To obtain the high sensitivity and resolution and the excellent resistance to O2RIE of the title material by composing the photoresist material of a specified polymer, a photosensitive substance capable of generating an acid by irradiation of light or radiant rays, and an org. solvent as a main component. CONSTITUTION:The positive type photoresist material contains the polymer (a silylether polymer) having a bond (a silylether bond) shown by Si-O-A (wherein A is a carbon atom consisting an aromatic ring), the photosensitive substance capable of generating the acid by irradiation of light or the radiant rays and the org. solvent, as the main component. Accordingly, the photosensitive substance generates the acid by decomposing the substance by irradiation of the light or the radiant rays, and the binding shown by the formula Si-O-A contd. in the silylether polymer is decomposed by the acid, thereby enabling the polymer to be soluble in an alkaline developer resulting the formation of a positive type pattern. Thus, the high sensitivity of the resist material against the light and the radiant rays is obtd., and the excellent resolution and resistance to O2RIE of the resist material is obtd. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011032475-A |
| priorityDate | 1987-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.