| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T279-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-50 |
| filingDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-6901642-B1 |
| titleOfInvention |
Electrostatic chuck and its manufacturing method |
| abstract |
Disclosed is an electrostatic chuck and a method for manufacturing the same, which can reduce leakage current due to high volume resistance and improve adsorption and desorption response characteristics of a semiconductor wafer. The electrostatic chuck is a sintered body in which electrodes are impregnated inside to fix a semiconductor wafer by electrostatic force, and is a rare earth composite oxidation containing alumina; a sintering aid; and 2 to 5 different rare earth metals. It is characterized in that the adsorption and desorption response characteristics of the semiconductor wafer are within 2 seconds, and the volume resistance at room temperature is 1.0E + 16 to 1.0E + 17Ω · cm. |
| priorityDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |