| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate |
2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-6509184-B2 |
| titleOfInvention |
Rock salt type salt as silicon carbide etchant to improve CMP material removal rate of SiC wafer |
| priorityDate |
2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |