| abstract |
In a heater for a semiconductor manufacturing apparatus using an AlN ceramic substrate, the AlN ceramic substrate has a high volume resistivity even if the AlN ceramic substrate contains O, C, Ti, Ca, Y as impurity elements. A semiconductor manufacturing apparatus heater according to the present invention is a semiconductor manufacturing apparatus heater in which a heating element is embedded in an AlN ceramic base, and the AlN ceramic base includes O, C, Ti, and Ca as impurity elements. , Y, the Ti / Ca mass ratio is 0.13 or more, and the TiN phase is not confirmed in the XRD profile. [Selection] Figure 1 |