| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 |
| filingDate |
2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-6234642-B1 |
| titleOfInvention |
Thin film transistor, thin film transistor substrate, liquid crystal display device, and method of manufacturing thin film transistor |
| abstract |
Regarding a TFT in which a channel region is formed of an oxide semiconductor, a threshold voltage shift caused by holes photoexcited in the vicinity of a source electrode and a drain electrode is suppressed, and reliability is improved. A lower semiconductor layer (140) is partially provided between the oxide semiconductor layer (130) and the gate insulating film (120). The lower semiconductor layer (140) includes a source overlap region (171) where the oxide semiconductor layer (130) overlaps the source electrode (151), and an oxide semiconductor layer (130) overlaps the drain electrode (152). It exists in at least one of the drain overlap region (172). In contrast, a region where the lower semiconductor layer (140) does not exist is provided between the source overlap region (171) and the drain overlap region (172). |
| priorityDate |
2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |