| abstract |
An optical detection device according to an embodiment of the present disclosure includes a semiconductor layer including a source region and a drain region, and a gate insulating layer including a photoelectric conversion layer that is located on a region sandwiched between the source region and the drain region of the semiconductor layer A signal detection circuit including a gate electrode located on the gate insulating layer, a first signal detection transistor having an input electrically connected to one of the source region and the drain region, and among the source region and the drain region A first transfer transistor connected between one of the first signal detection transistor and an input of the first signal detection transistor, and a first capacitor having one end electrically connected to the input of the first signal detection transistor. Detects an electrical signal corresponding to a change in the dielectric constant of the photoelectric conversion layer, which is caused by light incident on the photoelectric conversion layer via the gate electrode. |