http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6160852-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-709 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N5-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-87 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-3745 |
| filingDate | 2016-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-6160852-B1 |
| titleOfInvention | Optical sensor |
| abstract | An optical sensor of the present disclosure includes a semiconductor layer, a gate insulating layer including a photoelectric conversion layer on the semiconductor layer, a gate electrode on the gate insulating layer, and one of a source region and a drain region in the semiconductor layer, A voltage supply circuit for applying a voltage to the gate electrode; and a signal detection circuit connected to the other of the source region and the drain region. The photoelectric conversion layer includes a first voltage range in which the absolute value of the output current density increases as the reverse bias voltage increases, a second voltage range in which the output current density increases as the forward bias voltage increases, and a first voltage range Between the first voltage range and the second voltage range, the absolute value of the change rate of the output current density with respect to the bias voltage has a photocurrent characteristic having a first voltage range and a third voltage range smaller than the second voltage range. The voltage supply circuit applies a voltage so that the bias voltage applied to the photoelectric conversion layer is within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change in capacitance of the photoelectric conversion layer due to incident light. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158827-B2 |
| priorityDate | 2015-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.