http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6078189-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-00
filingDate 2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-6078189-B1
titleOfInvention IZO sintered compact sputtering target and manufacturing method thereof
abstract An indium oxide-zinc oxide based oxide (IZO) sintered sputtering target in which fine holes (micropores) remaining in crystal grain boundaries are reduced is provided. In a method for producing an IZO sintered sputtering target obtained by molding and sintering a calcined powder obtained by calcining indium oxide powder and zinc oxide powder, the calcining conditions are strictly set. The oxide that constitutes the target is a composite oxide of In 2 O 3 and Zn k In 2 O k + 3 (k = 3, 4, 5), and the relative density of the target is 98.4% or more. IZO sintered compact sputtering target characterized by the above-mentioned. [Selection] Figure 1
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Total number of triples: 29.