| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68792 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-507 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate |
2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-5840268-B1 |
| titleOfInvention |
Substrate processing apparatus, semiconductor device manufacturing method, and recording medium |
| abstract |
Provided is a substrate processing apparatus for varying a film thickness and a film characteristic formed on a substrate within a substrate surface. A substrate processing chamber, a first processing gas supply unit and a first reaction gas supply unit for supplying a first processing gas and a first reaction gas from above the substrate, and a side of the substrate are supplied. A second process gas supply unit and a second reaction gas supply unit for supplying the second process gas and the second reaction gas; a process gas supply step for supplying the first process gas and the second process gas to the substrate; A reaction gas supply step of supplying a first reaction gas and a second reaction gas, a process gas supply step and a step of performing the reaction gas supply step one or more times, and a reaction supplied to the center side of the substrate A control unit 121 is provided to control the gas amount to be different from the reaction gas supply amount supplied to the outer peripheral side of the substrate. [Selection] Figure 1 |
| priorityDate |
2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |