http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5824115-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-42 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-0525 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G9-052 |
filingDate | 2014-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-5824115-B1 |
titleOfInvention | Method for manufacturing tungsten-based capacitor element |
abstract | A method of manufacturing a tungsten-based capacitor element in which leakage current (LC) does not increase after the capacitor element is heat-treated at a high temperature, such as a sealing process or a reflow furnace, is provided. A sintering process for forming an anode body by sintering tungsten powder or a molded body thereof, a chemical conversion process for forming a dielectric layer on a surface layer portion of the anode body, and a conductive polymer on the dielectric layer A semiconductor layer forming step for forming a semiconductor layer by polymerization of the above, a post-forming step for repairing damage generated in the dielectric layer, and an electrolytic operation by immersing the anode body in a solution of a non-aqueous solvent containing an oxidizing agent A method for manufacturing a capacitor element, comprising a non-aqueous electrolysis step and a conductor layer forming step of forming a conductor layer for connecting a cathode lead on the anode body in this order. [Selection figure] None |
priorityDate | 2014-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 91.