| abstract |
The semiconductor manufacturing apparatus member (10) includes an alumina electrostatic chuck (20), a cooling plate (30), and a cooling plate-chuck bonding layer (40). The cooling plate (30) includes a first metal bonding layer (34) formed between the first to third substrates (31 to 33), the first and second substrates (31, 32), and second and A second metal bonding layer (35) formed between the third substrates (32, 33) and a refrigerant passage (36) are provided. The first to third substrates (31 to 33) contain the most silicon carbide, and are formed of a dense composite material including titanium silicide, titanium silicon carbide, and titanium carbide. The metal bonding layer (34, 35) is made of an Al—Si—Mg system or an Al—Mg system between the first and second substrates (31, 32) and between the second and third substrates (32, 33). Each substrate (31 to 33) is formed by hot-pressure bonding with a metal bonding material interposed therebetween. |