| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 |
| filingDate |
2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-5361468-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented. |
| priorityDate |
2008-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |