http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5336283-B2

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filingDate 2009-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-5336283-B2
titleOfInvention Pattern formation method
abstract There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I758545-B
priorityDate 2008-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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