http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5330027-B2

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filingDate 2009-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-5330027-B2
titleOfInvention Nonvolatile semiconductor memory device and manufacturing method thereof
abstract A memory string comprises: a first semiconductor layer having a plurality of columnar portions extending in a perpendicular direction with respect to a substrate, and joining portions joining lower ends of the plurality of columnar portions; a charge storage layer surrounding a side surface of the first semiconductor layer; and a first conductive layer surrounding a side surface of the charge storage layer and functioning as a control electrode of memory cells. A select transistor comprises: a second semiconductor layer extending upwardly from an upper surface of the columnar portions; an insulating layer surrounding a side surface of the second semiconductor layer; a second conductive layer surrounding a side surface of the insulating layer and functioning as a control electrode of the select transistors; and a third semiconductor layer formed on an upper surface of the second semiconductor layer and including silicon germanium.
priorityDate 2009-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 25.