http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5310271-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5310271-B2 |
| titleOfInvention | Semiconductor laser element |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of reducing electrical resistance and a light loss at a high level. <P>SOLUTION: The semiconductor laser device 1A includes: an n-type semiconductor substrate 3; an active layer 12; a diffraction lattice layer 15; and an n-type clad layer 18. The diffraction lattice layer 15 includes: a plurality of regions 15a disposed in an optical waveguide direction at a cycle corresponding to an output wavelength; and a region 15b that is provided among the plurality of regions 15a and has an impurity concentration lower than that of the plurality of regions 15a. Each of the plurality of regions 15a includes a p-type semiconductor layer 16 formed on the active layer 12 and an n-type semiconductor layer 17 formed on the p-type semiconductor layer 16, and the p-type semiconductor layer 16 and the n-type semiconductor layer 17 mutually constitute a tunnel junction. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| priorityDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522218 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID89859 |
Total number of triples: 12.