http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5306705-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5306705-B2 |
| titleOfInvention | Semiconductor device |
| abstract | <P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device that is resistant to external stresses and electrostatic discharge and is reliable, even when achieving thinning and miniaturization, prevents poor quality in shape and characteristics caused by the external stresses or electrostatic discharge in a manufacturing process, and has a satisfactory yield. <P>SOLUTION: A pair of conductive shields for covering a semiconductor integrated circuit, while sandwiching it prevents electrostatic discharge damage (malfunction of circuits and damage to semiconductor elements) by electrostatic discharge in the semiconductor integrated circuit. Also, by a pair of insulators for clamping the semiconductor integrated circuit, the reliable semiconductor device having resistance is provided while achieving thinning and miniaturization. Also in a manufacturing process, poor quality in shapes and characteristics caused by external stresses or electrostatic discharge is prevented, thus manufacturing the semiconductor device with improved yield. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| priorityDate | 2008-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 126.