http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5304810-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5304810-B2 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can improve crystallinity of a capacitor dielectric film that a ferroelectric capacitor has. <P>SOLUTION: In the method of manufacturing the semiconductor device, a base conductive film 30 is formed on upper surfaces of an insulating film 20 and a conductive plug 25 formed on a semiconductor substrate 10 respectively and after the upper surface of the base conductive film 30 is polished to be flattened, a crystalline conductive film 31 is formed. On the crystalline conductive film 31, a lower electrode 33a, a capacitor dielectric film 34a made of a ferroelectric material and an upper electrode 35a are laminated thereafter in order to form the capacitor Q. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| priorityDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.