http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5291866-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2006-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5291866-B2 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | <P>PROBLEM TO BE SOLVED: To form a Ti silicide layer with low resistance even on a substrate having low heat resistance. <P>SOLUTION: The Ti silicide layer with the low resistance is formed even on the substrate having low heat resistance by using a laser beam in a heat treatment process of the Ti silicide layer. A Ti film is deposited by contacting with a semiconductor film containing silicon. The Ti silicide layer with high resistance is formed by first heat treatment. The Ti silicide layer with high resistance is made into the Ti silicide layer with low resistance by second heat treatment using laser irradiation. Since it is unnecessary to carry out heat treatment at a high temperature for forming the Ti silicide layer, the substrate can be used without any restriction. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| priorityDate | 2005-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 99.