http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5290947-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2009-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5290947-B2 |
| titleOfInvention | Positive resist material and pattern forming method using the same |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a positive type resist material which has an extremely high alkaline dissolution-rate contrast before and after exposure, a high resolution, a high sensitivity, and good roughness (LWR) after exposure, and further which suppresses acid diffusion rate, in particular, a positive type resist material using a high molecular compound suitable as a base resin of a chemical amplification positive type resist material, and to provide a pattern forming method. <P>SOLUTION: The positive type resist material contains a high molecular compound including a repeating unit (a) having a group represented by a general formula (1) and a repeating unit (b) having a carboxyl group having hydrogen atom substituted for an acid labile group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| priorityDate | 2009-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 145.