http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5277877-B2

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
filingDate 2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-5277877-B2
titleOfInvention Manufacturing method of optical waveguide element
abstract <P>PROBLEM TO BE SOLVED: To suppress abnormal growth due to oxidation of an end surface of an exposed core layer by suppressing the oxidation of the end surface in selective growth and eliminating the need to use a halogen-based gas before the selective growth. <P>SOLUTION: On a semiconductor substrate, a first core layer 20 is formed of a compound semiconductor containing no Al. A first core layer in a second region A2 in contact with a first region A1 as a portion of a waveguide to be formed on the semiconductor substrate with respect to a wave guiding direction is removed to expose the end surface of the first core layer at a border between the first region and the second region. In the second region where the first core layer is removed, a second core layer 30 is formed of a compound semiconductor containing Al. The first core layer in a third region A3 disposed on the opposite side from the second region about the first region as a reference and coming into contact with the first region is removed to expose the end surface of the first core layer at a border between the first region and third region. In the third region where the first core layer is removed, a third core layer 35 is formed of a compound semiconductor containing Al. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT
priorityDate 2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.