Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
filingDate |
2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-5275608-B2 |
titleOfInvention |
Method for manufacturing semiconductor substrate |
abstract |
A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C. |
priorityDate |
2007-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |