http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5264018-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2008-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5264018-B2 |
| titleOfInvention | Method for manufacturing semiconductor substrate |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate, where a single crystal semiconductor layer is formed on a support substrate, characterized in that, after the single crystal semiconductor substrate is pasted, it is reproduced for efficient and economic application. <P>SOLUTION: On a first surface of the single crystal semiconductor substrate, a conductive thin film of tensile stress which is to be a protective layer is formed, allowing a second surface to warp in convex form. The second surface of the single crystal semiconductor substrate is implanted with ion species to form a fragile layer at the region of predetermined depth. Then, the single crystal semiconductor substrate is jointed to the support substrate. By heating the single crystal semiconductor substrate, such single crystal semiconductor layer as separated from the single crystal semiconductor substrate is secured on the support substrate. Meanwhile, a regenerative process is applied on the second surface of the single crystal semiconductor substrate from which the semiconductor layer is separated. In the regenerative process, an oxide film is formed by a thermal oxidation process, and the oxide film is removed using hydrofluoric acid and the like. Here, the protective film is formed, thereby the film of the first surface is not reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| priorityDate | 2008-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.