http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5189229-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C7-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25C3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-22 |
| filingDate | 2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-5189229-B1 |
| titleOfInvention | Manufacturing method of high purity lanthanum, high purity lanthanum, sputtering target made of high purity lanthanum, and metal gate film mainly composed of high purity lanthanum |
| abstract | [Summary] A high-purity lanthanum having a purity of 5 N or more excluding rare earth elements and gas components and an α-ray count of 0.001 cph / cm 2 or less. A raw material of crude lanthanum metal having a purity of 4N or less excluding gas components is subjected to molten salt electrolysis at a bath temperature of 450 to 700 ° C. to obtain a lanthanum crystal. Next, the lanthanum crystal is desalted and then dissolved by an electron beam. A high purity lanthanum manufacturing method, wherein the volatile substances are removed, the purity excluding rare earth elements and gas components is 5N or more, and the α-ray count is 0.001 cph / cm 2 or less. It is an object of the present invention to provide a technology capable of efficiently and stably providing a sputtering target composed of high-purity lanthanum of low α-ray, a high-purity material lanthanum, and a metal gate thin film mainly composed of the high-purity material lanthanum. [Selection] Figure 1 |
| priorityDate | 2011-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.