| abstract |
An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen. |