http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4810984-B2
Outgoing Links
Predicate | Object |
---|---|
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B15-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B15-088 |
filingDate | 2005-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2011-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-4810984-B2 |
titleOfInvention | Metal-coated polyimide film |
abstract | <P>PROBLEM TO BE SOLVED: To provide a metallization polyimide film excellent in the adhesion of copper foil and a substrate, insulation reliability, and migration resistance, and is adapted to practical use as a substrate of a highly reliable COF, TAB, an FPC, a semiconductor package, or the like. <P>SOLUTION: In a metallization polyimide film formed by laminating (1) a first metal layer not containing Cu, and (2) a second metal layer principally comprising Cu sequentially on at least one side of a polyimide film, the amount of residual metal other than Cu on the surface of the polyimide film treated with a sulphuric acid/hydrogen peroxide based etching reagent after the metallization polyimide film is heat-treated at 150°C is 1 μg/cm<SP>2</SP>or less. <P>COPYRIGHT: (C)2007,JPO&INPIT |
priorityDate | 2005-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 191.