http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4792143-B2

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filingDate 2007-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-4792143-B2
titleOfInvention Semiconductor device and manufacturing method thereof
abstract A semiconductor device includes: a first substrate made of semiconductor and having first regions, which are insulated from each other and disposed in the first substrate; and a second substrate having electric conductivity and having second regions and insulation trenches. Each insulation trench penetrates the second substrate so that the second regions are insulated from each other. The first substrate provides a base substrate, and the second substrate provides a cap substrate. The second substrate is bonded to the first substrate so that a sealed space is provided between a predetermined surface region of the first substrate and the second substrate. The second regions include an extraction conductive region, which is coupled with a corresponding first region.
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Total number of triples: 28.