http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4667529-B2

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filingDate 2010-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-4667529-B2
titleOfInvention Method for manufacturing semiconductor device
abstract To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device. The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.
priorityDate 2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.