http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4314650-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38 |
| filingDate | 1998-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-4314650-B2 |
| titleOfInvention | Method for forming interlayer insulating film of semiconductor device |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101549777-B1 |
| priorityDate | 1998-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.