http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-3783670-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G12-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-28 |
| filingDate | 2002-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-3783670-B2 |
| titleOfInvention | Negative photoresist composition and pattern forming method |
| abstract | <P>PROBLEM TO BE SOLVED: To provide a highly practical negative photoresist suitable for lithography using light of ≤220 nm such as ArF excimer laser light as exposure light and having resistance to pattern deformation due to swelling and adhesion to a substrate (a fine pattern is less liable to peel off a substrate) in addition to dry etching resistance and high resolution. <P>SOLUTION: A negative photoresist composition is provided which comprises a polymer containing a diol structure having a repeating unit of formula (1), a crosslinking agent comprising a compound containing a functional group of formula (7) and a photoacid generator which generates an acid upon exposure. <P>COPYRIGHT: (C)2003,JPO |
| priorityDate | 2002-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 158.