http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2916452-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-59 |
| filingDate | 1998-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2916452-B1 |
| titleOfInvention | Evaluation method of crystalline semiconductor thin film and laser annealing apparatus |
| abstract | An object of the present invention is to evaluate a crystal state of a p-Si thin film formed on a substrate such as glass by laser annealing, and to provide a laser annealing apparatus which realizes high yield and high throughput. The difference between the light transmittance of a polycrystalline silicon thin film and the light transmittance of an amorphous silicon thin film is measured to detect and evaluate the crystal state of the polycrystalline silicon thin film. A laser annealing device that performs laser annealing on the part again. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114300-B2 |
| priorityDate | 1998-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 14.