http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2914373-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1998-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2914373-B1 |
| titleOfInvention | Preparation method of clathrate compound thin film |
| abstract | A method for forming a clathrate compound thin film on a semiconductor substrate is provided. This enables the application of the clathrate compound to a device. SOLUTION: After a deposition film of an alkali metal or the like is formed on a group IV element substrate, the substrate is subjected to a heat treatment in a rare gas atmosphere and then to a heat treatment in a vacuum. Heat treatment in a rare gas atmosphere is 100 to 650 ° C, and heat treatment in a vacuum is 25 Perform at 0-650 ° C. |
| priorityDate | 1998-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.