| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1989-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2889588-B2 |
| titleOfInvention |
Method of forming alternation of single crystal semiconductor material layer and insulating material layer |
| priorityDate |
1988-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |