| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
1994-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1998-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1998-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2702889-B2 |
| titleOfInvention |
Semiconductor layer crystal growth method |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518082-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6867112-B1 |
| priorityDate |
1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |