http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2623463-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 1989-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1997-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2623463-B2 |
| titleOfInvention | Gallium nitride based compound semiconductor electrode forming method |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7899101-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8934513-B2 |
| priorityDate | 1989-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.