http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022516238-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2019-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2022516238-A |
| titleOfInvention | Precursors and processes for depositing Si-containing membranes using ALD at temperatures above 550 ° C. |
| abstract | A method for forming a Si-containing film on a substrate, in which the substrate is heated to a temperature higher than 550 ° C., and the substrate is a Si-containing film containing a Si-containing precursor having the following formula. Step of exposure to vapor containing the forming composition: SiR 1 y R 2 4-xy (NH-SiR ' 3 ) x [in the formula, x = 2, 3, 4; y = 0, 1, 2; R 1 and R 2 are independently H, halogen (Cl, Br, I), C 1 to C 4 alkyl, isocyanate, C 1 to C 4 alkoxide, or -NR 3 R 4 groups, respectively. (In the equation, R 3 and R 4 are independently selected from H, C 1 to C 4 alkyl, except that if R 3 = H, then R 4 > C 1 ). Each R'is independently selected from H, halogen (Cl, Br, I), or C1 - C4 alkyl], as well as a Si-containing precursor deposited on the substrate. It comprises a step of forming a Si-containing film on a substrate by an ALD process. The Si-containing precursors are SiH 2 (NH-Si (CH 3 ) 3 ) 2 , SiHCl (NH-Si (CH 3 ) 3 ) 2 , SiCl 2 (NH-Si (CH 3 ) 3 ) 2 , SiH (NH). -Si (CH 3 ) 3 ) 3 , SiCl (NH-Si (CH 3 ) 3 ) 3 , or Si (NH-Si (CH 3 ) 3 ) 4 can be selected. [Selection diagram] FIG. 6 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7314016-B2 |
| priorityDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.