| abstract |
Disclosed is a method of irradiating an etching solution to provide controlled etching of a material. An etching solution having a first level of reactants (eg, a gas, a liquid, or a combination thereof) is applied to the surface of the material to be etched. Irradiate the etching solution so that the etching solution has a second level of reactants that is greater than the first level. The surface of the material is modified (eg, oxidized) with the irradiated etching solution and the modified layer of the material is removed. Exposure and removal can be repeated or circulated to etch the material. Further, in the oxidation / dissolution embodiment, oxidation and dissolution can occur at the same time, and the oxidation rate can be higher than the dissolution rate. The material can be a polycrystalline material, a polycrystalline metal, and / or other material. One etching solution may contain hydrogen peroxide that is irradiated to form hydroxyl radicals. |