| abstract |
PROBLEM TO BE SOLVED: To provide a resist underlayer film having good adhesion to any resist pattern regardless of negative development or positive development, and further having good adhesion to finer patterns such as EUV exposure. Provided are a composition for forming a silicon-containing resist underlayer film that can be formed, a pattern forming method, and a silicon compound. SOLUTION: The silicon content is characterized by containing one or more of one or more hydrolyzates and / or hydrolyzed condensates of a silicon compound (A-1) represented by the following general formula (1). Composition for forming a resist underlayer film. [Chemical 1] [Selection diagram] None |