http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022094811-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
filingDate 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473ec7dbaf937c3798f563773d0f33d1
publicationDate 2022-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2022094811-A
titleOfInvention Film formation method
abstract An object of the present invention is to provide a film formation method capable of forming a film containing few impurities and excellent in crystallinity and surface flatness. A process of preparing a raw material solution, a mist generating process of generating mist from the raw material solution, a transporting process of transporting the mist from a mist generator to a film forming chamber, and a heat treatment of the transported mist to form a substrate. In the step of preparing the raw material solution, the raw material solution is prepared by mixing a metal chloride salt or an aqueous solution thereof with hydrogen peroxide. or dissolving a metal in a mixed solution of hydrochloric acid and hydrogen peroxide. [Selection drawing] Fig. 1
priorityDate 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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