| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_017ee6d1131a540278c1cedac9e70109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d89d696c5d7271f51fb83edd9783519c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dc3a3d897da571df0ce3da2f3290572 |
| publicationDate |
2022-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022092570-A |
| titleOfInvention |
Pillar selection transistor for 3D crosspoint memory |
| abstract |
PROBLEM TO BE SOLVED: To provide a pillar selection transistor for increasing a memory density while minimizing a footprint of a decoder transistor in a crosspoint memory array. A memory device structure 100 includes a vertical pillar selection transistor 102 having a channel layer 104 between a source structure 106 and a drain structure 108, and a gate electrode 110 adjacent to the channel. The gate dielectric layer 111 is between the gate electrode and the channel layer. The first terminal 112 of the first interconnect 112 is coupled to a source or drain structure. The memory device structure further includes a pair of memory cells 118, 120 (136, 138). Each memory cell includes a selector and a memory element. The individual first terminals of the memory cell are coupled to the second and third terminals of the first interconnect, respectively. The individual second terminals of the memory cell are individually coupled to a pair of second interconnects. [Selection diagram] FIG. 1A |
| priorityDate |
2020-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |