| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_887e125008cf84c53554d9e68cf7f02b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2021-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e43b6fb278aabadad1d7184212e455e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3155bbe7aa351b4cb4edd5b81dd07527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e9ff3a51e4432fa4153e3215f23fdee |
| publicationDate |
2022-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022075587-A |
| titleOfInvention |
Electron beam lithography using double-layer resist |
| abstract |
PROBLEM TO BE SOLVED: To provide a method, an apparatus, and a system for processing a material stack. A hydrogen sill sesquioxane layer (200) is deposited on a material stack (100). The diffusion barrier layer (300) is deposited on the hydrogen silsesquioxane layer (200) to form a two-layer (302). The diffusion barrier layer (300) within the electron beam (400) required to expose the hydrogen silsesquioxane layer (200) for the geometric dimensions of the selected features with the desired width. It comprises a material having a thickness that increases the amount of time before the hydrogen silsesquioxane layer ages to change the radiation dose. An electron beam (400) is guided through the surface (402) of the bilayer (302) to form the exposed portion (404) of the bilayer (302). The hydrogen silsesquioxane layer (200) is developed. The exposed portion (404) remains on the material stack (100). [Selection diagram] FIG. 4 |
| priorityDate |
2020-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |