| abstract |
Kind Code: A1 A semiconductor device is provided that is particularly useful for power devices and that has improved withstand voltage and electrode adhesion. The semiconductor device includes a semiconductor layer and an electrode layer disposed on the semiconductor layer, the electrode layer comprising a first electrode layer and a second electrode disposed on the first electrode layer. , wherein the outer end of the second electrode layer is located outside the outer end of the first electrode layer, and the semiconductor layer is separated from the semiconductor layer. has an electric field relaxation region with a different electrical resistivity, and the electric field relaxation region is at least part of a portion of the second electrode layer located outside the outer edge of the first electrode layer and a semiconductor device overlapping in a plan view. [Selection drawing] Fig. 1 |