| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same. A semiconductor device 200 has a first semiconductor stack 210N and a second semiconductor stack 210P on a substrate 202. A dummy spacer between the first semiconductor stack and the second semiconductor stack, each of which is separated from each other and includes laminated semiconductor layers, and the semiconductor stack, which is in contact with the first side wall of each semiconductor layer of the semiconductor stack. It includes 212N, 212P, and a gate structure 220 that wraps a second side wall, a top surface, and a bottom surface of each semiconductor layer of the semiconductor stack. [Effect] The size of the device can be reduced and manufacturing problems can be reduced. [Selection diagram] FIG. 9A |