| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c864c342d3ba8ae8a6d099f2285038a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2021-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a73826af432775ae3ae6ee42e8511545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c6f656ca1d20416162f6c89a25b14c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2bb7dcbd61a973f84cdbc37e22d8779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dab6f8388cd4171e18c5ac81424829e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d75127fb1cd76497f00d1674810fca3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cc212c4271f48ea5a26ccaaf97704ac |
| publicationDate |
2022-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022027620-A |
| titleOfInvention |
Semiconductor device structure and its forming method |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device structure and a method for forming the same. A semiconductor device structure includes a device and a conductive structure arranged on the device. The conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure includes a third portion and a fourth portion. The third part surrounds the first part of the sidewall. The fourth portion further includes a first spacer layer disposed on the conductive structure. The semiconductor device structure further comprises a first dielectric material that surrounds the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. There is. The first dielectric material contains a first material that is different from the second material of the first spacer layer and is substantially flush with the fourth portion of the first spacer layer. [Selection diagram] None |
| priorityDate |
2020-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |