| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c864c342d3ba8ae8a6d099f2285038a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2021-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d11dc827d285bf68364208188bd112d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adf1ed4a2f639cc7d1e364fb9c2b8951 |
| publicationDate |
2022-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022023829-A |
| titleOfInvention |
Manufacturing method of semiconductor device and semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide an optimum source / drain shape of a FinFET or a gate all-around (GAA) FET. SOLUTION: In a method of manufacturing a semiconductor device, a fin structure is formed. The fin structure includes a laminate of a first low semiconductor layer 22 and a second bottom semiconductor layer 23 arranged on the semiconductor substrate 10, and a hard mask layer on the laminate. The separation insulating layer 30 is formed so that the hard mask layer and the laminate are exposed from the separation insulating layer. The sacrificial clad layer 35 is formed to cover at least the side walls of the exposed hardmask layer and laminate. The first dielectric layer 40 is formed, and a second dielectric layer 45 made of a material different from that of the first dielectric layer is formed on the first dielectric layer. The second dielectric layer is recessed, and a third dielectric layer 50 made of a material different from the second dielectric layer is formed on the recessed second dielectric layer to form a wall. Form a fin structure. [Selection diagram] FIG. 13A |
| priorityDate |
2020-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |