| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for forming the same, in which a power rail formed on the back surface of a substrate is connected to an epiaxial source feature via a back surface via to prevent leakage between sources or between sources and gates. .. A semiconductor device includes a dielectric layer 256 formed on a power rail 270, a bottom semiconductor layer 206 formed on the dielectric layer, and a back surface spacer 260 formed along a side wall of the bottom semiconductor layer. And the channel semiconductor layer 210B on the bottom semiconductor layer, which is stacked and separated from each other by the conductive features in contact with the side wall of the dielectric layer and the side wall of the back surface spacer, and the metal gate structure 250 that encloses each channel semiconductor layer. Includes epitaxial source / drain (S / D) features 240S, 240D, which are in contact with each conductive feature in contact with the power rail and in contact with the sidewalls of the channel semiconductor layer. [Selection diagram] FIG. 21B |