http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022021332-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c864c342d3ba8ae8a6d099f2285038a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-573 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2021-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3a1ea0d836b2c8b03ab811a42f019a8 |
| publicationDate | 2022-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2022021332-A |
| titleOfInvention | Semiconductor devices with multiplexer cells and camouflage designs, and methods of forming multiplexer cells. |
| abstract | PROBLEM TO BE SOLVED: To reduce the risk of information leakage due to reverse engineering. A semiconductor device includes a semiconductor substrate 401 and a conductive segment 410. It includes a G1, a conductive layer 420, a first contact element 422.11, and a second contact element 422.12. The first contact element 422.11 includes the first conductive portion 420.11 of the conductive layer and the conductive segment 410. Formed between G1 and the conductive segment 410. The G1 and the first conductive portion 420.11 are electrically connected. The second contact element 422.12 includes the second conductive portion 420.12 of the conductive layer and the conductive segment 410. It is formed between G1 and G1. The second contact element 422.12 has a conductive segment 410. G1 and the second conductive portion 420.12 are electrically separated. [Selection diagram] FIG. 4B |
| priorityDate | 2020-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 23.