| abstract |
PROBLEM TO BE SOLVED: To provide a 3D GAA capacitance device for improving the density of the device and a method for manufacturing the same. An IC device 10 having gate all-around (GAA) devices 20N, 20C overlays a substrate and a first nanostructure (channels 22A-22C) including a semiconductor having a first resistance. And overlay on the substrate, laterally offset from the first nanostructure, have the same height as the first nanostructure on the substrate, and have a second resistance lower than the first resistance. A second nanostructure (channels 26A-26C) containing the conductor, a first gate structure 200A wound on the first nanostructure, and a second gate wrapped on the second nanostructure. It has a structure of 200D. [Selection diagram] Fig. 1A |